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IGW08T120 Dataheets PDF



Part Number IGW08T120
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description IGBT
Datasheet IGW08T120 DatasheetIGW08T120 Datasheet (PDF)

Preliminary TrenchStoP Series IGW08T120 C Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • Approx. 1.0V reduced VCE(sat) compared to BUP305D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coeff.

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Preliminary TrenchStoP Series IGW08T120 C Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • Approx. 1.0V reduced VCE(sat) compared to BUP305D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge G E Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 1200V IC 8A VCE(sat),Tj=25°C 1.7V Tj,max 150°C Symbol VCE IC 16 8 ICpul s IF 16 8 VGE 1) Type IGW08T120 Package TO-247AC Ordering Code Q67040-S4513 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area www.DataSheet4U.com VCE ≤ 1200V, Value 1200 Unit V A 24 24 Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C ±20 10 70 -40...+150 -55...+150 260 V µs W °C tSC Ptot Tj Tstg - 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Preliminary / Rev. 1 Sep-03 Power Semiconductors Preliminary TrenchStoP Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 0 .5m A VCE(sat) V G E = 15 V , I C = 8 A T j =2 5 ° C T j =1 2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 3m A, V C E = V G E V C E = 12 0 0V , V G E = 0V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current www.DataSheet4U.com IGW08T120 Max. Value 1.7 Unit K/W Symbol RthJC RthJA Conditions TO-247AC 40 Symbol Conditions Value min. 1200 5.0 typ. 1.7 2.0 2.2 5.8 max. 2.2 6.5 Unit V mA 5 none 0.2 2.0 100 nA S Ω IGES gfs RGint V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 8 A Transconductance Integrated gate resistor Power Semiconductors 2 Preliminary / Rev. 1 Sep-03 Preliminary TrenchStoP Series Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) IGW08T120 600 36 28 53 48 13 nC nH A pF Ciss Coss Crss QGate LE IC(SC) V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 96 0 V, I C =8 A V G E = 15 V T O - 24 7A C V G E = 15 V , t S C ≤ 10 µ s V C C = 6 0 0 V, T j = 25 ° C Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy www.DataSheet4U.com Symbol Conditions Value min. typ. 40 23 450 70 0.67 0.7 1.37 max. - Unit td(on) tr td(off) tf Eon Eoff Ets T j =2 5 ° C , V C C = 60 0 V, I C = 8 A, V G E =- 15 /1 5 V , R G = 81 Ω , 2) L σ =1 8 0n H, 2) C σ = 3 9p F Energy losses include “tail” and diode reverse recovery. ns mJ Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 ° C , V C C = 60 0 V, I C =8 A , V G E =- 15 /1 5 V , RG= 81Ω, 2) L σ =1 8 0n H, 2) C σ = 3 9p F Energy losses include “tail” and diode reverse recovery. 40 26 570 140 1.08 1.2 2.28 mJ ns Symbol Conditions Value min. typ. max. Unit 1) 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. 3 Preliminary / Rev. 1 Sep-03 Power Semiconductors Preliminary TrenchStoP Series IGW08T120 tp=2µs 20A TC=80°C 10A IC, COLLECTOR CURRENT 15A TC=110°C 10A IC, COLLECTOR CURRENT 10µs 1A 50µs 150µs 500µs Ic 5A 0,1A 20ms DC Ic 0,01A 1V 0A 10Hz 100Hz 1kHz 10kHz 100kHz 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 81Ω) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤150°C;VGE=15V) 70W www.DataSheet4U.com 15A 50W 40W 30W 20W 10W 0W 25°C IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 60W 10A 5A 50°C 75°C 100°C 125°C 0A 25°C 75°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) TC, CASE TEMPERATURE Figure 4. Collector current as a functi.


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