Document
Preliminary TrenchStoP Series
IGW08T120
C
Low Loss IGBT in Trench and Fieldstop technology
• • • • • • • • Approx. 1.0V reduced VCE(sat) compared to BUP305D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge
G
E
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 1200V IC 8A VCE(sat),Tj=25°C 1.7V Tj,max 150°C Symbol VCE IC 16 8 ICpul s IF 16 8 VGE
1)
Type IGW08T120
Package TO-247AC
Ordering Code Q67040-S4513
Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area
www.DataSheet4U.com VCE ≤ 1200V,
Value 1200
Unit V A
24 24
Tj ≤ 150°C
Diode forward current TC = 25°C TC = 100°C Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
±20 10 70 -40...+150 -55...+150 260
V µs W °C
tSC Ptot Tj Tstg -
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Preliminary / Rev. 1 Sep-03
Power Semiconductors
Preliminary TrenchStoP Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 0 .5m A VCE(sat) V G E = 15 V , I C = 8 A T j =2 5 ° C T j =1 2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 3m A, V C E = V G E V C E = 12 0 0V , V G E = 0V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current
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IGW08T120
Max. Value 1.7 Unit K/W
Symbol RthJC RthJA
Conditions
TO-247AC
40
Symbol
Conditions
Value min. 1200 5.0 typ. 1.7 2.0 2.2 5.8 max. 2.2 6.5
Unit
V
mA 5 none 0.2 2.0 100 nA S Ω
IGES gfs RGint
V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 8 A
Transconductance Integrated gate resistor
Power Semiconductors
2
Preliminary / Rev. 1 Sep-03
Preliminary TrenchStoP Series
Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
1)
IGW08T120
600 36 28 53 48 13 nC nH A pF
Ciss Coss Crss QGate LE IC(SC)
V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 96 0 V, I C =8 A V G E = 15 V T O - 24 7A C V G E = 15 V , t S C ≤ 10 µ s V C C = 6 0 0 V, T j = 25 ° C
Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy
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Symbol
Conditions
Value min. typ. 40 23 450 70 0.67 0.7 1.37 max. -
Unit
td(on) tr td(off) tf Eon Eoff Ets
T j =2 5 ° C , V C C = 60 0 V, I C = 8 A, V G E =- 15 /1 5 V , R G = 81 Ω , 2) L σ =1 8 0n H, 2) C σ = 3 9p F Energy losses include “tail” and diode reverse recovery.
ns
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 ° C , V C C = 60 0 V, I C =8 A , V G E =- 15 /1 5 V , RG= 81Ω, 2) L σ =1 8 0n H, 2) C σ = 3 9p F Energy losses include “tail” and diode reverse recovery. 40 26 570 140 1.08 1.2 2.28 mJ ns Symbol Conditions Value min. typ. max. Unit
1) 2)
Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. 3 Preliminary / Rev. 1 Sep-03
Power Semiconductors
Preliminary TrenchStoP Series
IGW08T120
tp=2µs
20A
TC=80°C
10A
IC, COLLECTOR CURRENT
15A TC=110°C 10A
IC, COLLECTOR CURRENT
10µs
1A
50µs 150µs 500µs
Ic
5A
0,1A
20ms DC
Ic
0,01A 1V
0A 10Hz
100Hz
1kHz
10kHz
100kHz
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 81Ω)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤150°C;VGE=15V)
70W www.DataSheet4U.com
15A
50W 40W 30W 20W 10W 0W 25°C
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
60W
10A
5A
50°C
75°C
100°C
125°C
0A 25°C
75°C
125°C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C)
TC, CASE TEMPERATURE Figure 4. Collector current as a functi.