IGBT
IGP03N120H2 IGW03N120H2
HighSpeed 2-Technology
• Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for s...
Description
IGP03N120H2 IGW03N120H2
HighSpeed 2-Technology
Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
Qualified according to JEDEC2 for target applications
PG-TO220-3-1
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C G
E
PG-TO-247-3
Type IGW03N120H2 IGP03N120H2
VCE
IC
Eoff
Tj
1200V 3A 0.15mJ 150°C
1200V 3A 0.15mJ 150°C
Marking G03H1202 G03H1202
Package PG-TO-247-3 PG-TO-220-3-1
Maximum Ratings
Parameter
Collector-emitter voltage Triangular collector current TC = 25°C, f = 140kHz TC = 100°C, f = 140kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°...
Similar Datasheet
- IGW03N120H2 IGBT - Infineon Technologies