FDP6N60ZU

FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET April 2009 UniFETTM FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω Features RDS(on) = 1.7Ω ( Typ.) @ VGS = 10V, ID = 2.25A Low gate charge ( Typ. 14.5nC) Low Crss ( Typ. 5pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G DS TO-220 FDP Series o GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25 C unless otherwise noted* Symbol VDSS www.DataSheet4U.com V GSS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FDP6N60ZU FDPF6N60ZUT 600 ±30 4.5* 2.7* 18* 150 4.5 10.5 20 Units V V A A mJ A mJ V/ns ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL 4.5 2.7 18 Single Pulsed Avalanche Energy 105 0.85 -55 to +150 300 33.8 0.27 W W/oC o o Operating and S...