SIHFPC40

IRFPC40, SiHFPC40 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 60 8.3 30 Single D FEATURES 600 1.2 Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT TO-247 DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFPC40PbF SiHFPC40-E3 IRFPC40 SiHFPC40 www.DataSheet4U.com PARAMETER ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Energyb TC = 25 °C EAS PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw LIMIT 600 ± 20 6.8 4.3 27 1.2 410 150 3.0 - 55 to + 150 300d 10 1.1 W/°C mJ W V/ns °C lbf · in N·m A UNIT V Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Sing...