IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08
OptiMOS®-T Power-Transistor
Features • N-channel - Logic Level - Enhancem...
IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08
OptiMOS®-T Power-
Transistor
Features N-channel - Logic Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested ESD Class 2 (HBM)
EIA/JESD22-A114-B
Product Summary V DS R DS(on),max (SMD version) ID 55 7.6 80 V mΩ A
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Type IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Ordering Code SP0000-88128 SP0000-88131 SP0000-88127
Marking 3N06L08 3N06L08 3N06L08
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1)
www.DataSheet4U.com
Symbol ID
Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2)
Value 80 61 320 170 55 ±16
Unit A
Pulsed drain current2) Avalanche energy, single pulse3) Drain gate voltage2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
I D,pulse E AS V DG V GS P tot T j, T stg
T C=25 °C I D=40 A
mJ V V W °C
T C=25 °C
105 -55 ... +175 55/175/56
Rev. 1.0
page 1
2005-09-16
IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08
Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, un...