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IPB80N04S2L-03 Dataheets PDF



Part Number IPB80N04S2L-03
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPB80N04S2L-03 DatasheetIPB80N04S2L-03 Datasheet (PDF)

IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on),max (SMD version) ID 40 3.1 80 V mΩ A PG-TO263-3-2 PG-TO220-3-1 Type IPB80N04S2L-03 IPP80N04S2L-03 Package PG-TO263-3-2 PG-TO220-3-1 Ordering Code SP0002-20158 SP0002-19063 Marking 2N04L03 .

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IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on),max (SMD version) ID 40 3.1 80 V mΩ A PG-TO263-3-2 PG-TO220-3-1 Type IPB80N04S2L-03 IPP80N04S2L-03 Package PG-TO263-3-2 PG-TO220-3-1 Ordering Code SP0002-20158 SP0002-19063 Marking 2N04L03 2N04L03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) www.DataSheet4U.com Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 80 80 320 810 ±20 Unit A Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=80A mJ V W °C T C=25 °C 300 -55 ... +175 Rev. 1.0 page 1 2006-03-02 IPB80N04S2L-03 IPP80N04S2L-03 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D=250 µA V DS=40 V, V GS=0 V, T j=25 °C V DS=40 V, V GS=0 V, T j=125 °C2) www.DataSheet4U.com Values typ. max. Unit - - 0.5 62 62 40 K/W 40 1.2 1.6 2.0 V Zero gate voltage drain current I DSS - 0.01 1 µA - 1 1 3.6 100 100 4.5 nA mΩ Gate-source leakage current I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=80 A V GS=4.5 V, I D=80 A, SMD version Drain-source on-state resistance - 3.3 4.2 Drain-source on-state resistance RDS(on) V GS=10 V, I D=80 A V GS=10 V, I D=80 A, SMD version - 2.7 3.4 mΩ - 2.4 3.1 Rev. 1.0 page 2 2006-03-02 IPB80N04S2L-03 IPP80N04S2L-03 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) www.DataSheet4U.com Diode pulse current2) Values typ. max. Unit C iss C oss Crss t d(on) tr t d(off) tf V DD=20 V, V GS=10 V, I D=80 A, R G=1.1 Ω V GS=0 V, V DS=25 V, f =1 MHz - 6000 2200 700 19 50 77 27 - pF ns Q gs Q gd Qg V plateau V DD=32 V, I D=80 A, V GS=0 to 10 V - 19 55 163 3.2 24 81 213 - nC V IS I S,pulse V SD T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=20 V, I F=I S, di F/dt =100 A/µs V R=20 V, I F=I S, di F/dt =100 A/µs - 0.9 80 320 1.3 A Diode forward voltage V Reverse recovery time2) t rr - 62 78 ns Reverse recovery charge2) 1) Q rr - 145 180 nC Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 217A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) 3) Defined by design. Not subject to production test. See diagram 13 Qualified at -20V and +20V. 4) 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2006-03-02 IPB80N04S2L-03 IPP80N04S2L-03 1 Power dissipation P tot = f(T C); V GS ≥ 4 V 2 Drain current I D = f(T C); V GS ≥ 10 V 350 100 300 80 250 60 P tot [W] 200 150 I D [A] 40 20 0 0 50 100 150 200 0 50 100 150 200 100 50 0 T C [°C] T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p www.DataSheet4U.com 1000 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 100 1 µs 0.5 10 µs 100 µs 100 1 ms 10-1 Z thJC [K/W] 0.1 I D [A] 0.05 10 10-2 0.01 1 0.1 1 10 100 10-3 10-7 single pulse 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2006-03-02 IPB80N04S2L-03 IPP80N04S2L-03 5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS 300 6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 °C parameter: V GS 20 18 250 4V 16 200 14 3.5 V 150 3.5 V R DS(on) [mΩ] 12 10 8 6 4 2 4V 4.5 V 10 V I D [A] 100 50 3V 0 0 2 4 2.5 V 0 6 8 10 0 20 40 60 80 100 120 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j www.DataSheet4U.com 200 8 Typ. Forward transconductance g fs = f(I D); T j = 25°C parameter: g fs 300 180 160 140 200 120 100 80 60 40 175 °C 250 g fs [S] 25 °C -55 °C I D [A] 150 100 50 20 0 1 2 0 3 4 0 50 100 150 200 V GS [V] I D [A] Rev. 1.0 page 5 2006-03-02 IPB80N04S2L-03 IPP80N04S2L-03 9 Typ. Drain-source on-state resistance R DS(ON) = f(T j) parameter: I D = 80 A; VGS = 10 V 5 10 Typ. gate threshold voltage V GS(th) = f(T j); V GS .


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