Document
IPB80N04S2L-03 IPP80N04S2L-03
OptiMOS® Power-Transistor
Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested
Product Summary V DS R DS(on),max (SMD version) ID 40 3.1 80 V mΩ A
PG-TO263-3-2
PG-TO220-3-1
Type IPB80N04S2L-03 IPP80N04S2L-03
Package PG-TO263-3-2 PG-TO220-3-1
Ordering Code SP0002-20158 SP0002-19063
Marking 2N04L03 2N04L03
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1)
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Symbol ID
Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2)
Value 80 80 320 810 ±20
Unit A
Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature
I D,pulse E AS V GS P tot T j, T stg
T C=25 °C I D=80A
mJ V W °C
T C=25 °C
300 -55 ... +175
Rev. 1.0
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2006-03-02
IPB80N04S2L-03 IPP80N04S2L-03
Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D=250 µA V DS=40 V, V GS=0 V, T j=25 °C V DS=40 V, V GS=0 V, T j=125 °C2)
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Values typ. max.
Unit
-
-
0.5 62 62 40
K/W
40 1.2
1.6
2.0
V
Zero gate voltage drain current
I DSS
-
0.01
1
µA
-
1 1 3.6
100 100 4.5 nA mΩ
Gate-source leakage current
I GSS R DS(on)
V GS=20 V, V DS=0 V V GS=4.5 V, I D=80 A V GS=4.5 V, I D=80 A, SMD version
Drain-source on-state resistance
-
3.3
4.2
Drain-source on-state resistance
RDS(on)
V GS=10 V, I D=80 A V GS=10 V, I D=80 A, SMD version
-
2.7
3.4
mΩ
-
2.4
3.1
Rev. 1.0
page 2
2006-03-02
IPB80N04S2L-03 IPP80N04S2L-03
Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2)
www.DataSheet4U.com Diode pulse current2)
Values typ. max.
Unit
C iss C oss Crss t d(on) tr t d(off) tf V DD=20 V, V GS=10 V, I D=80 A, R G=1.1 Ω V GS=0 V, V DS=25 V, f =1 MHz
-
6000 2200 700 19 50 77 27
-
pF
ns
Q gs Q gd Qg V plateau V DD=32 V, I D=80 A, V GS=0 to 10 V
-
19 55 163 3.2
24 81 213 -
nC
V
IS I S,pulse V SD
T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=20 V, I F=I S, di F/dt =100 A/µs V R=20 V, I F=I S, di F/dt =100 A/µs
-
0.9
80 320 1.3
A
Diode forward voltage
V
Reverse recovery time2)
t rr
-
62
78
ns
Reverse recovery charge2)
1)
Q rr
-
145
180
nC
Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 217A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos
2) 3)
Defined by design. Not subject to production test. See diagram 13 Qualified at -20V and +20V.
4) 5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.0
page 3
2006-03-02
IPB80N04S2L-03 IPP80N04S2L-03
1 Power dissipation P tot = f(T C); V GS ≥ 4 V 2 Drain current I D = f(T C); V GS ≥ 10 V
350
100
300 80 250 60
P tot [W]
200
150
I D [A]
40 20 0 0 50 100 150 200 0 50 100 150 200
100
50
0
T C [°C]
T C [°C]
3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p
www.DataSheet4U.com 1000
4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T
100
1 µs 0.5 10 µs 100 µs
100
1 ms
10-1
Z thJC [K/W]
0.1
I D [A]
0.05
10
10-2
0.01
1 0.1 1 10 100
10-3 10-7
single pulse
10-6
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
Rev. 1.0
page 4
2006-03-02
IPB80N04S2L-03 IPP80N04S2L-03
5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS
300
6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 °C parameter: V GS
20 18
250
4V
16 200 14
3.5 V
150
3.5 V
R DS(on) [mΩ]
12 10 8 6 4 2
4V 4.5 V 10 V
I D [A]
100
50
3V
0 0 2 4
2.5 V
0 6 8 10 0 20 40 60 80 100 120
V DS [V]
I D [A]
7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j
www.DataSheet4U.com 200
8 Typ. Forward transconductance g fs = f(I D); T j = 25°C parameter: g fs
300
180 160 140 200 120 100 80 60 40
175 °C
250
g fs [S]
25 °C -55 °C
I D [A]
150
100
50
20 0 1 2
0 3 4 0 50 100 150 200
V GS [V]
I D [A]
Rev. 1.0
page 5
2006-03-02
IPB80N04S2L-03 IPP80N04S2L-03
9 Typ. Drain-source on-state resistance R DS(ON) = f(T j) parameter: I D = 80 A; VGS = 10 V
5
10 Typ. gate threshold voltage V GS(th) = f(T j); V GS .