OptiMOS® Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C pea...
OptiMOS® Power-
Transistor
Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Ultra low Rds(on) 100% Avalanche tested Green product (RoHS compliant)
IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4
Product Summary V DS R DS(on),max (SMD version) ID
40 V 3.7 mΩ 80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB80N04S2-H4 IPP80N04S2-H4 IPI80N04S2-0H4
Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1
Marking 2N04H4 2N04H4 2N04H4
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=80A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 80
80
320 660 ±20 300 -55 ... +175 55/175/56
Unit A
mJ V W °C
Rev. 1.1
page 1
2008-02-22
IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4
Parameter
Symbol
Conditions
min.
Values typ.
Unit max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
- - 0.5 K/W - - 62
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area3)
-
- 62 - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage
V (BR)DSS V...