Advance Product Information
September19, 2005
DC - 20 GHz Discrete power pHEMT
• • • • • • • •
TGF2022-12
Key Features and Performance
Frequency Range: DC - 20 GHz > 31 dBm Nominal Psat 58% Maximum PAE 39 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability applications 1.2mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 90-150mA (Under RF Drive, Id rises from 90mA to 300mA) Chip Dimensions: 0.57 x 0.79 x 0.10 mm (0.022 x 0.031 x 0.004 in)
Product Description
The TriQuint TGF2022-12 is a discrete 1.2 mm pHEMT which operates from DC-20 GHz. The TGF2022-12 is designed using TriQuint’s proven standard 0.35um power pHEMT production process. The TGF2022-12 typically provides > 31 dBm of saturated output power with www.DataSheet4U.com power gain of 13 dB. The maximum power added efficiency is 58% which makes the TGF2022-12 appropriate for high efficiency applications. The TGF2022-12 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The TGF2022-12 has a protective surface passivation layer providing environmental robustness.
Lead-free and RoHS compliant
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Primary Applications
• • • • •
35 30
Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications
Maximum Gain (dB)
25 MSG 20 15 10 5 0 0 2 4 6 8 10 12 14 16 MAG
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email:
[email protected] Web: www.triquint.com
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Advance Product Information
September19, 2005
TABLE I MAXIMUM RATINGS Symbol
V+ V I
+
TGF2022-12
Value
12.5 V -5V to 0V 564 mA 14 mA 26 dBm See note 3 150 °C 320 °C -65 to 150 °C 2/ 2/ 3/ 4/ 2/
Parameter 1/
Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
Notes
2/
| IG | PIN PD TCH TM TSTG 1/ 2/ 3/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 °C – TBASE °C) / 69.0 (°C/W) Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
4/
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TABLE II DC PROBE CHARACTERISTICS (TA = 25 qC, Nominal)
Symbol Idss Gm VP VBGS VBGD Parameter Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Minimum -1.5 -30 -30 Typical 360 450 -1 Maximum -0.5 -14 -14 Unit mA mS V V V
Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email:
[email protected] Web: www.triquint.com
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Advance Product Information
September19, 2005
TABLE III RF CHARACTERIZATION TABLE 1/
(TA = 25 °C, Nominal) f = 10 GHz
Vd = 10V Idq = 90 mA Saturated Output Power Power Added Efficiency Power Gain Parallel Resistance Parallel Capacitance Load Reflection coefficient 31.9 52.4 12.9 22.34 0.552 0.580 ∠ 153.7 Vd = 12V Idq = 90 mA 32.6 51.9 12.9 28.49 0.515 0.559 ∠ 145.4
TGF2022-12
f = 18 GHz UNITS
SYMBOL
Power Tuned:
PARAMETER
Vd = 10V Idq = 90 mA 31.1 41.5 8.3 21.77 0.461 0.693 ∠ 154.8
Vd = 12V Idq = 90 mA 31.7 37.0 8.0 24.22 0.481 0.713 ∠ 153.0 dBm % dB Ω pF -
Psat PAE Gain Rp 2/ Cp 2/ Γ L 3/, 4/ Efficiency Tuned: Psat PAE Gain Rp 2/ Cp 2/ Γ L 3/, 4/
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Saturated Output Power Power Added Efficiency Power Gain Parallel Resistance Parallel Capacitance Load Reflection coefficient Output TOI
31.3 58.3 13 36.24 0.503 0.569 ∠ 137.1 40
32.3 56.0 13 37.11 0.510 0.577 ∠ 136.6 39
30.5 46.0 8.5 25.65 0.550 0.759 ∠ 153.5 40
31.1 42.5 8.3 33.49 0.559 0.795 ∠ 150.6 39
dBm % dB Ω pF dBm
OIP3
1/ Values in this table are from measurements taken from a 0.6mm unit pHEMT cell at 10 and 18 GHz 2/ Large signal equivalent pHEMT output network 3/ Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz 4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp. The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded
TABLE IV THERMAL INFORMATION Parameter θJC Thermal Resistance Test Conditions TCH (oC)
145
TJC (qC/W)
69
TM (HRS)
1.6 E+6
Vd = 12 V (channel to backside of carrier) Idq = 90 mA Pdiss = 1.08 W
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70°C baseplate temperature.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email:
[email protected] Web: www.triquint.com
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A.