AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19045EF is a 45 W, 28 V N-channel ...
AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power
Transistor
Introduction
The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect
transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.
GSM Features
Typical performance over entire GSM band: — P1dB: 50 W typical. — Power gain @ P1dB = 14.0 dB continuous wave (CW). — Efficiency @ P1dB = 54% typical CW. — Return loss: –10 dB.
Device Performance Features
High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years.
Figure 1. AGR19045EF (flanged) Package Typical two carrier N-CDMA performance: VDD = 28 V, IDQ = 550 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95 CDMA (pilot, sync, paging, traffic codes 8—13). Peak/average (P/A) = 9.72 dB at 0.01% probability on CCDF. 1.2288 MHz transmission bandwidth (BW). Adjacent channel power ratio (ACPR) measured over 30 kHz BW at f1 – 885 kHz and f2 + 885 kHz. Third-order intermodulation distortion (IM3) measured over a 1.2288 MHz BW at f1 – 2.5 MHz and f2 + 2.5 MHz: www.DataSheet4U.com — Output power (POUT): 9.5 W. — Power gain: 15 dB. — Efficiency: 24.8%. — IM3: –34.5 dBc. — ACPR: –49.5 dBc.
Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device ca...
