AGR18045E

AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability. It is packaged in an industrystandard package and is capable of delivering a minimum output power of 45 W, which makes it ideally suited for today’s RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 1.5 Unit °C/W Table 2. Absolute Maximum Ratings* Parameter Sym Value Drain-source Voltage VDSS 65 Gate-source Voltage VGS –0.5, 15 Drain Current Continuous ID Total Dissipation at TC = 25 °C PD 115 Derate Above 25 ° C — 0.67 Operating Junction TemperaTJ 200 ture Storage Temperature Range TSTG –65, 150 Unit Vdc Vdc Adc W W/°C °C °C Figure 1. Available (flanged) Package Features Typical performance ratings for GSM EDGE (f = 1.840 GHz, POUT = 15 W) — Error vector magnitude (EVM): 1.9% www.DataSheet4U.com — Power gain: 15 dB — Drain efficiency: 32% — Modulation spectrum: @ ±400 kHz = –63 dBc. @ ±600 kHz = –73 dBc. Typical continuous wave (CW) performance over entire digital communication system (DCS) band: — P1dB: 49 W typ...