FCA22N60N

FCA22N60N — N-Channel SupreMOS® MOSFET FCA22N60N N-Channel SupreMOS® MOSFET 600 V, 22 A, 165 mΩ May 2014 Features BVDSS > 650 V @ TJ = 150oC RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A Ultra Low Gate Charge (Typ. Qg = 45 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF) 100% Avalanche Tested RoHS Compliant Application PDP TV Solar Inverter AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G G D S TO-3PN S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Le...