SI1054X

New Product Si1054X Vishay Siliconix N-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.095 at VGS = 4.5 V 12 0.104 at VGS = 2.5 V 0.114 at VGS = 1.8 V ID (A)a 1.32 1.26 0.88 5.25 Qg (Typ.) FEATURES Halogen-free Option Available TrenchFET® Power MOSFET 100 % Rg Tested RoHS COMPLIANT APPLICATIONS Load Switch for Portable Devices SC-89 (6-LEADS) D 1 6 D Marking Code D 2 D D R XX YY Lot Traceability and Date Code 5 G 3 4 S Part # Code G Top View S Ordering Information: Si1054X-T1-E3 (Lead (Pb)-free) Si1054X-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 12 ±8 1.32b, c 1.05b, c 6 0.2b, c 0.236b, c 0.151b, c - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Notes: a. Based on TA = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 °C/W. t≤5s Steady State Symbol RthJA Typical 440 540 Maximum 530 650 Unit °C/W www.DataSheet4U.com Document Number: 69579 S-80641-Rev. B, 24-Mar-08 www.vishay.com 1 New Product Si1054X Vishay Siliconix SPECIFICATIO...