SIR472DP

SiR472DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.012 at VGS = 10 V 0.015 at VGS = 4.5 V ID (A)a, g 20 20 Qg (Typ.) 6.8 nC FEATURES Halogen-free TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile Optimized for High-Side Synchronous Operation 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT Rectifier PowerPAK SO-8 D 6.15 mm S 1 2 3 S S 5.15 mm APPLICATIONS G 4 D 8 7 6 5 D D D Notebook CPU Core - High-Side Switch G Bottom View Ordering Information: SiR472DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 20g 20g 14b, c 11b, c 50 20g 3.2b, c 22 24 29.8 19.0 3.9b, c 2.5b, c - 55 to 150 260 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 27 3.5 Maximum 32 4.2 Unit °C/W Notes: a. B...