Document
P-Channel 1.5-V Rated MOSFET
Si8451DB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.080 at VGS = - 4.5 V
- 20
0.100 at VGS = - 2.5 V
0.126 at VGS = - 1.8 V
0.200 at VGS = - 1.5 V
ID (A)e - 10.8 - 9.7 - 3.0 - 1.2
Qg (Typ.) 7.7 nC
MICRO FOOT
Bump Side View
Backside View
FEATURES • TrenchFET® Power MOSFET
APPLICATIONS • Portable Devices
- Battery Management - Low Threshold Load Switch - Battery Protection
S
G
2
1
S
8451
XXX
S
S
3
6
G
D
D
4
5
Device Marking: 8451
xxx = Date/Lot Traceability Code
D
Ordering Information: Si8451DB-T2-E1 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
±8
TC = 25 °C
- 10.8
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
- 8.7 - 5.0a, b
TA = 70 °C
- 4.0a, b
Pulsed Drain Current
IDM
- 15
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
- 10.8 - 2.3a, b
TC = 25 °C
13
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
8.4 2.77a, b
TA = 70 °C
1.77a, b
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Package Reflow Conditionsc
IR/Convection
260
Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TC = 25 °C.
Document Number: 69845 S-82119-Rev. B, 08-Sep-08
RoHS
COMPLIANT
Unit V A W °C
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Si8451DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta, b Maximum Junction-to-Foot (Drain)
Steady State
Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. Maximum under Steady State conditions is 85 °C/W. c. Case is defined as top surface of the package.
Symbol RthJA RthJF
Typical 37 7
Maximum 45 9.5
Unit °C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient VGS(th) Temperature Coefficient
ΔVDS/TJ ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 70 °C
On-State Drain Currenta
ID(on)
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 1 A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 2.5 V, ID = - 1 A VGS = - 1.8 V, ID = - 1 A
VGS = - 1.5 V, ID = - 1 A
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 1 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 8 V, ID = - 1 A
Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Qgs Qgd Rg td(on)
tr td(off)
tf td(on)
tr td(off)
tf
VDS = - 10 V, VGS = - 4.5 V, ID = 1 A VGS = - 0.1 V, f = 1 MHz
VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω
VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 8 V, Rg = 1 Ω
Min. - 20 - 0.4
-5
Typ.
- 20 3
0.065 0.080 0.101 0.138
8
Max.
- 1.0 ± 100
-1 - 10
0.080 0.100 0.126 0.200
Unit V
mV/°C V nA µA A
Ω
S
750
160
pF
100
16
24
10
15
nC
1.3
2.7
8
Ω
20
30
30
45
45
70
30
45
ns
5
10
12
20
45
70
30
45
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Document Number: 69845 S-82119-Rev. B, 08-Sep-08
Si8451DB
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
IS = - 1 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge Reverse Recovery Fall Time
Qrr ta
IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
- 10.8 A
- 15
- 0.8
- 1.2
V
25
40
ns
13
20
nC
9 ns
16
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Document Number: 69845 S-82119-Rev. B, 08-Sep-08
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Si8451DB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
5
VGS = 5 thru 2.5 V
12
4
VGS = 2 V
9
3
I D - Drain Current (A)
I D .