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Si8451DB Dataheets PDF



Part Number Si8451DB
Manufacturers Vishay Intertechnology
Logo Vishay Intertechnology
Description P-Channel MOSFET
Datasheet Si8451DB DatasheetSi8451DB Datasheet (PDF)

P-Channel 1.5-V Rated MOSFET Si8451DB Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.080 at VGS = - 4.5 V - 20 0.100 at VGS = - 2.5 V 0.126 at VGS = - 1.8 V 0.200 at VGS = - 1.5 V ID (A)e - 10.8 - 9.7 - 3.0 - 1.2 Qg (Typ.) 7.7 nC MICRO FOOT Bump Side View Backside View FEATURES • TrenchFET® Power MOSFET APPLICATIONS • Portable Devices - Battery Management - Low Threshold Load Switch - Battery Protection S G 2 1 S 8451 XXX S S 3 6 G D D 4 5 Device Marking: 8.

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P-Channel 1.5-V Rated MOSFET Si8451DB Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.080 at VGS = - 4.5 V - 20 0.100 at VGS = - 2.5 V 0.126 at VGS = - 1.8 V 0.200 at VGS = - 1.5 V ID (A)e - 10.8 - 9.7 - 3.0 - 1.2 Qg (Typ.) 7.7 nC MICRO FOOT Bump Side View Backside View FEATURES • TrenchFET® Power MOSFET APPLICATIONS • Portable Devices - Battery Management - Low Threshold Load Switch - Battery Protection S G 2 1 S 8451 XXX S S 3 6 G D D 4 5 Device Marking: 8451 xxx = Date/Lot Traceability Code D Ordering Information: Si8451DB-T2-E1 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 TC = 25 °C - 10.8 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID - 8.7 - 5.0a, b TA = 70 °C - 4.0a, b Pulsed Drain Current IDM - 15 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS - 10.8 - 2.3a, b TC = 25 °C 13 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 8.4 2.77a, b TA = 70 °C 1.77a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Package Reflow Conditionsc IR/Convection 260 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TC = 25 °C. Document Number: 69845 S-82119-Rev. B, 08-Sep-08 RoHS COMPLIANT Unit V A W °C www.vishay.com 1 Si8451DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b Maximum Junction-to-Foot (Drain) Steady State Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. Maximum under Steady State conditions is 85 °C/W. c. Case is defined as top surface of the package. Symbol RthJA RthJF Typical 37 7 Maximum 45 9.5 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVDS/TJ ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 70 °C On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 1 A Drain-Source On-State Resistancea RDS(on) VGS = - 2.5 V, ID = - 1 A VGS = - 1.8 V, ID = - 1 A VGS = - 1.5 V, ID = - 1 A Forward Transconductancea gfs VDS = - 10 V, ID = - 1 A Dynamicb Input Capacitance Ciss Output Capacitance Coss VDS = - 10 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance Crss Total Gate Charge Qg VDS = - 10 V, VGS = - 8 V, ID = - 1 A Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDS = - 10 V, VGS = - 4.5 V, ID = 1 A VGS = - 0.1 V, f = 1 MHz VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 8 V, Rg = 1 Ω Min. - 20 - 0.4 -5 Typ. - 20 3 0.065 0.080 0.101 0.138 8 Max. - 1.0 ± 100 -1 - 10 0.080 0.100 0.126 0.200 Unit V mV/°C V nA µA A Ω S 750 160 pF 100 16 24 10 15 nC 1.3 2.7 8 Ω 20 30 30 45 45 70 30 45 ns 5 10 12 20 45 70 30 45 www.vishay.com 2 Document Number: 69845 S-82119-Rev. B, 08-Sep-08 Si8451DB Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C Pulse Diode Forward Current ISM Body Diode Voltage VSD IS = - 1 A, VGS = 0 V Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Qrr ta IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Min. Typ. Max. Unit - 10.8 A - 15 - 0.8 - 1.2 V 25 40 ns 13 20 nC 9 ns 16 Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 69845 S-82119-Rev. B, 08-Sep-08 www.vishay.com 3 Si8451DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 5 VGS = 5 thru 2.5 V 12 4 VGS = 2 V 9 3 I D - Drain Current (A) I D .


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