SKIIP82ANB15T1

SKiiP 82 ANB 15 T1 Absolute Maximum Ratings Symbol Conditions 1) Bridge Rectifier VRRM ID IFSM I²t VCES VGES IC ICM VRRM IF IFM Tj Tstg Visol Theatsink = 80 °C tp = 10 ms; sin. 180 °, Tj = 25 °C tp = 10 ms; sin. 180 °, Tj = 25 °C 1500 100 3) 1000 5000 1200 ± 20 58 / 40 116 / 80 1200 38 / 26 76 / 52 – 40 ... + 150 – 40 ... + 125 2500 V A A A²s V V A A V A A °C °C V Values Units MiniSKiiP 8 SEMIKRON integrated intelligent Power SKiiP 82 ANB 15 T1 3-phase bridge rectifier + IGBT braking chopper IGBT Chopper Case M8a Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Freewheeling Diode 2) Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Diode & IGBT AC, 1 min. Characteristics Symbol Conditions 1) Diode - Rectifier VF VTO rT Rthjh IF = 75 A Tj = 125 °C Tj = 125 °C Tj = 125 °C per diode – – – – – – – – – – – – – – – – – – – 1,15 0,8 4,5 – 2,5(3,1) 44 56 380 70 13 3,3 – 2,0(1,8) 1,0 32 25 4,5 1,0 – – – – 1,0 3,0(3,7) – – – – – – 0,5 2,5(2,3) 1,2 44 – – – 1,2 V V mΩ K/W min. typ. max. Units IGBT - Chopper IC = 50 A Tj = 25 (125) °C VCEsat td(on) VCC = 600 V; VGE = ± 15 V tr IC = 50 A; Tj = 125 °C Rgon = Rgoff = 22 Ω td(off) tf inductive load Eon + Eoff VCE = 25 V; VGE = 0 V, 1 MHz Cies per IGBT Rthjh Diode 2) - Chopper VF VTO rT IRRM Qrr Eoff Rthjh RTS M1 Case IF = 25 A Tj = 25 (125) °C Tj = 125 °C Tj = 125 °C IF = 25 A; VR = – 600 V diF/dt = – 500 A/µs VGE = 0 V, Tj = 125 °C per diode T = 25 / 100 °C mounting torque mechanical outline see pages B 16 –13 an...