AS8SF384K32

Austin Semiconductor, Inc. AS8SF384K32 128K x 16 SRAM & PIN ASSIGNMENT (Top View) 512K x 16 FLASH SRAM / FLASH MEMORY ARRAY FEATURES Operation with single 5V supply High speed: 35ns SRAM, 90ns FLASH Built in decoupling caps and multiple ground pins for low noise Organized as 128K x 16 SRAM and 512K x 16 FLASH Low power CMOS TTL Compatible Inputs and Outputs Both blocks of memory are user configurable as 256K x 8 NC A0 A1 A2 A3 A4 A5 FCS\1 GND FCS\2 SWE\1 A6 A7 A8 A9 A10 VCC SRAM & FLASH Mixed Module 68 Lead CQFP (QT) FLASH MEMORY FEATURES Operation with single 5V (±10%) Eight equal sectors of 64K bytes Any combination of sectors can be concurrently erased Supports full chip erase Embedded erase and program algorithms 20,000 program/erase cycles Hardware write protection SI/O 0 SI/O 1 SI/O 2 SI/O 3 SI/O 4 SI/O 5 SI/O 6 SI/O 7 GND SI/O 8 SI/O 9 SI/O 10 SI/O 11 SI/O 12 SI/O 13 SI/O 14 SI/O 15 NC NC A18 FWE\2 FWE\1 SWE\2 A17 SCS\2 OE\ SCS\1 A16 A15 A14 A13 A12 A11 VCC FI/O 0 FI/O 1 FI/O 2 FI/O 3 FI/O 4 FI/O 5 FI/O 6 FI/O 7 GND FI/O 8 FI/O 9 FI/O 10 FI/O 11 FI/O 12 FI/O 13 FI/O 14 FI/O 15 OPTIONS MARKINGS XT IT PIN A 0-18 PIN DESCRIPTION FUNCTION Address Inputs SRAM Data Input / Outputs FLASH Data Input / Outputs Output Enable SRAM Write Enables FLASH Write Enables SRAM Chip Selects FLASH Chip Selects Power Supply Ground No Connect Operating Temperature Ranges Military (-55oC to +125oC) Industrial (-40oC to +85oC) Timing SRAM 35ns SI/O 0-1...