D2016

www.DataSheet4U.com Darlington 2SD2016 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=1.5mA IC=1A, IB=1.5mA VCE=12V, IE=–0.1A VCB=10V, f=1MHz 2SD2016 10max 10max 200min 1000 to 15000 1.5max 2.0max 90typ 40typ V V MHz pF 13.0min Equivalent circuit B C (2k Ω) (200 Ω) E Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2016 200 200 6 3 0.5 25(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Igniter, Relay and General Purpose (Ta=25°C) Unit External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 µA V 16.9±0.3 8.4±0.2 mA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 2.54 3.9 B C E I C – V CE Characteristics (Typical) A mA V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) 3 (V CE =4V) 3 3m 1.5 1mA Collector Current I C (A) 0.5m A 2 2 Collector Current I C (A) 2 p) Tem mp) (Cas e Te 25˚C (Ca 1 1 12 5˚C 25˚C 1 se –5 5˚C 0 0 1 2 3 4 0 0.2 1 Base Current I B (mA) 3 0 0 1 Base-Emittor Voltage V B E (V) –55˚C (C 125 ˚C ase Tem p) I B= 0 .3m A ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. 2 Collector-Emitter Voltage V C E (V) h FE – I C Characteristics (Typical) (V C E =4V) 10000 5000 DC C...