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m o c. U 4te e h S ata D . w
SHINDENGEN
VX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2188
(F10F50VX2)
500V 10A
FEATURES •œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. •œ The static Rds(on) is small. •œ The switching time is fast. APPLICATION
•œ Switching power supply of AC 100V input
OUTLINE DIMENSIONS
Case : E-pack
Case : FTO-220
(Unit : mm)
•œ High voltage power supply •œ Inverter
RATINGS
•œAbsolute Maximum Ratings • Tc i = 25•Ž•j Item Symbol Conditions Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current• DC•j i ID Continuous Drain Current• Peak) i IDP Continuous Source Current• DC•j i IS PT Total Power Dissipation Single Pulse Avalanche Current IAS Tch= 25•Ž Dielectric Strength Vdis Terminals to case, AC 1 minute Mounting Torque TOR • i Recommended torque : 0.3N¥m •j Ratings -55•`150 150 500 •}30 10 30 10 40 10 2 0.5 Unit •Ž V
A W A kV N• E m
Copyright & Copy;2000 Shindengen Electr
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VX-2 Series Power MOSFET
●Electrical Characteristics Tc = 25℃ Item Symbol Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current IGSS Forward Transconductance gfs Static Drain-Source On-state Resistance RDS(ON) Gate Threshold Voltage VTH Source-Drain Diode Forwade Voltage VSD Thermal Resistance θjc Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions
2SK2188 ( F10F50VX2 )
Min. 500 2.4 2.5 Typ. Max. 250 ±0.1 6.3 0.8 3.0 30 890 70 200 70 140 Unit V μA
ID = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V ID = 5A, VDS = 10V ID = 5A, VGS = 10V ID = 1mA, VDS = 10V IS = 5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 10A VDS = 10V, VGS = 0V, f = 1MHZ ID = 5A, VGS = 10V, RL = 30Ω VGS = 0V
S 1.0 Ω 3.5 V 1.5 3.12 ℃/W nC pF 110 220 ns
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
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2SK2188
20 Tc = − 55 °C
Transfer Characteristics
25 °C
15
Drain Current ID [A]
100 °C 150 °C
10
5 VDS = 25V pulse test TYP 0 5 10 15 20
0
Gate-Source Voltage VGS [V]
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2SK2188
10
Static Drain-Source On-state Resistance
Static Drain-Source On-state Resistance RDS(ON) [Ω]
ID = 5A 1
0.1
VGS = 10V pulse test TYP -50 0 50 100 150
Case Temperature Tc [°C]
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2SK2188
6
Gate Threshold Voltage
5
Gate Threshold Voltage VTH [V]
4
3
2
1 VDS = 10V ID = 1mA TYP -50 0 50 100 150
0
Case Temperature Tc [°C]
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2SK2188
100
Safe Operating Area
10 100 µs
Drain Current ID [A]
200 µs
1
R DS(ON) limit
1ms
10ms
0.1
DC
Tc = 25°C Single Pulse 0.01 1 10 100 1000
Drain-Source Voltage VDS [V]
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2SK2188
Transient Thermal Impedance
10
1
Transient Thermal Impedance θjc(t) [°C/W]
0.1
0.01 10-4 10-2
10-3
10-1
100
101
102
Time t [s]
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2SK2188
10000
Capacitance
Capacitance Ciss Coss Crss [pF]
1000
Ciss
Coss 100
Crss
f=1MHz Tc=25 °C TYP 10 0 20 40 60 80 100
Drain-Source Voltage VDS [V]
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2SK2188
100
Power Derating
80
Power Derating [%]
60
40
20
0
0
50
100
150
Case Temperature Tc [°C]
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2SK2188
500
Gate Charge Characteristics
20
Drain-Source Voltage VDS [V]
15 VDD = 400V 300 200V 100V 10 200 VGS
5 100 ID = 10A TYP 0 0 10 20 30 40 0 50
Gate Charge Qg [nC]
Gate-Source Voltage VGS [V]
400
VDS
.