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SLSD-71N8 Dataheets PDF



Part Number SLSD-71N8
Manufacturers Silonex
Logo Silonex
Description Solderable Planar Photodiode
Datasheet SLSD-71N8 DatasheetSLSD-71N8 Datasheet (PDF)

www.DataSheet4U.com SLSD-71N8 SLSD-71N8 / # Solderable Planar Photodiode Features • • • • • • • Visible to IR spectral irradiance range High reliability Oxide passivation Linear short circuit current Low capacitance, high speed Protective coating Available in arrays where # indicates number of elements ( maximum of 8 elements ) 0.8 3.4 1.3 #32 AWG Wire Sensitive Area (2.7 sq. mm.) Dimensions in mm. -Blk (Cathode) 150 nom 4.8 Nom. +Red (Anode) Description The Silonex series of silicon soldera.

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www.DataSheet4U.com SLSD-71N8 SLSD-71N8 / # Solderable Planar Photodiode Features • • • • • • • Visible to IR spectral irradiance range High reliability Oxide passivation Linear short circuit current Low capacitance, high speed Protective coating Available in arrays where # indicates number of elements ( maximum of 8 elements ) 0.8 3.4 1.3 #32 AWG Wire Sensitive Area (2.7 sq. mm.) Dimensions in mm. -Blk (Cathode) 150 nom 4.8 Nom. +Red (Anode) Description The Silonex series of silicon solderable planar photodiodes feature low cost, high reliability, and linear short circuit current over a wide range of illumination. These devices are widely used for light sensing and power generation because of their stability and high efficiency. They are particularly suited to power conversion applications due to their low internal impedance and relatively high shunt impedance, stability, and humidity characteristics. These devices also provide a reliable, inexpensive detector for applications such as light beam sensing and instrumentation. The electrical characteristics below are per element. In the multielement arrays the cathodes are common to a single cathode wire. Also available without leads as part number SLCD-61N8 Directional Sensitivity Characteristics 40° 50° 30° 20° 10° 1.0 0.8 Half Angle = 60° 60° 0.6 0.4 70° 80° 90° 100° 1.0 0.8 0.6 0.4 0.2 0.0 20° 40° 60° 80° 100° 120° Absolute Maximum Ratings Storage Temperature Operating Temperature -40°C to +105°C -40°C to +105°C Min 100 Typ 170 0.40 100 0.55 20 930 400 60 Units Test Conditions 2 VR=0V, Ee=25mW/cm (1) µA 2 V Ee=25mw/cm (1) 1.7 VR=5V, Ee=0 µA pF VR=0V, Ee=0, f=1MHz A/W λ=940nm V IR=100µA nm 1100 nm deg Specifications subject to change without notice 103193 REV 2 Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter ISC Short Circuit Current VOC Open Circuit Voltage ID Reverse Dark Current CJ Junction Capacitance Spectral Sensitivity Sλ VBR Reverse Breakdown Voltage Maximum Sensitivity Wavelength λP Sensitivity Spectral Range λR Acceptance Half Angle θ1/2 Notes: (1) Ee = light source @ 2854 °K Max 5200 St. Patrick St., Montreal Que., H4E 4N9, Canada Tel: 514-768-8000 Fax: 514-768-8889 QF-84 The Old Railway, Princes Street Ulverston, Cumbria, LA12 7NQ, UK Tel: 01 229 581 551 Fax: 01 229 581 554 .


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