SILICON DIODE
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FH1100
SILICON DIODE
DESCRIPTION:
The ASI FH1100 is a Silicon Diffused Hot Carrier Diode.
PACKAGE...
Description
www.DataSheet4U.com
FH1100
SILICON DIODE
DESCRIPTION:
The ASI FH1100 is a Silicon Diffused Hot Carrier Diode.
PACKAGE STYLE DO-7
FEATURES INCLUDE:
QS = 1.6 pC Typ. C = 1.0 pF Max. @ f = 890 MHz Hermetic Glass Package
MAXIMUM RATINGS
IF VR PDISS TJ TSTG Tsoldering 10 mA 5.0 V 100 mW @ TC = 25 °C -65 °C to +125 °C -65 °C to +150 °C +260 °C for 5 Seconds
CHARACTERISTICS
SYMBOL
VF IR VBR CT0 NF QS IF = 10 mA IF = 10 mA VR = 1.0 V
TC = 25 °C
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
550 1.0
UNITS
mV µA V
IR = 100 µA VR = 0 V f = 1.0 MHz f = 890 MHz
5.0 1.0 10 1.6
pF dB pC
A D V A N C E D S E M I C O N D U C T O R, I N C
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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