FDS4885C

www.DataSheet4U.com FDS4885C January 2005 FDS4885C Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features Q1: N-Channel RDS(on) = 22mΩ @ VGS = 10V RDS(on) = 35mΩ @ VGS = 7V Q2: P-Channel RDS(on) = 31mΩ @ VGS = –10V RDS(on) = 42mΩ @ VGS = –4.5V Fast switching speed High power and handling capability in a widely used surface mount package 7.5A, 40V –6A, –40V Applications Synchronous rectifier Backlight inverter stage D1 D D1 D DD2 D2 D 5 6 Q2 4 3 Q1 SO-8 Pin 1 SO-8 G1 S1 S G2 S2 G 7 8 2 1 S S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25°C unless otherwise noted Parameter Q1 40 (Note 1a) Q2 40 ±20 –6 –20 2 1.6 1 0.9 –55 to +150 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation ±20 7.5 20 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1...