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2SD2111
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
2...
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2SD2111
Silicon
NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
2
1 1. Base 2. Collector 3. Emitter ID 3.0 kΩ (Typ) 400 Ω (Typ) 3
12 3
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2SD2111
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC IC(peak) PC PC* Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Tj Tstg ID *
1 1
Rating 120 120 7 3 6 2 25 150 –55 to +150 3
Unit V V V A A W
°C °C A
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7 — — 1000 — — — — — Typ — — — — — — — — — — — Max — — — 10 10 20000 1.5 3.0 2.0 3.5 3.0 V V V Unit V V V µA Test conditions IC = 0.1 mA, IE = 0 IC = 25 mA, RBE = ∞ IE = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1.5 A* IC = 3 A, IB = 30 mA* IC = 3 A, IB = 30 mA* ID = 3 A*
1 1
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD
IC = 1.5 A, IB = 3 mA*
1
1
IC = 1.5 A, IB = 3 mA*
1
1
See switching characteristic curve of 2SD1605.
2
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