MRF6S20010NR1

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications. Typical Two - Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP Power Gain — 15.5 dB Drain Efficiency — 36% IMD — - 34 dBc Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (2130 - 2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability Power Gain — 15.5 dB Drain Efficiency — 15% IM3 @ 10 MHz Offset — - 47 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 49 dBc in 3.84 MHz Channel Bandwidth Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (1930 - 1990 MHz), IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency— 16% ACPR @ 885 kHz Offset = - 60 dBc in 30 kHz Bandwidth Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 4 Watts Avg., Full Frequency Band (1805 - 1880 MHz) Power Gain — 16 dB Drain Efficiency — 33% EVM — 1.3% rms Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW O...