TC55V400AFT-70

TC55V400AFT-55,-70 www.DataSheet4U.com TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V400AFT is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 0.5 mA standby current (at VDD = 3 V, Ta = 25°C, maximum) when chip enable ( CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output enable ( OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of -40° to 85°C, the TC55V400AFT can be used in environments exhibiting extreme temperature conditions. The TC55V400AFT is available in normal and reverse pinout plastic 48-pin thin-small-outline package (TSOP). FEATURES · · · · · · · Low-power dissipation Operating: 10.8 mW/MHz (typical) Single power supply voltage of 2.3 to 3.6 V Power down features using CE1 and CE2...