ST2SC2002

www.DataSheet4U.com ST 2SC2002 NPN Silicon Epitaxial Planar Transistor for use in driver stage of high voltage audio equipments. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 60 60 5 300 60 600 150 -55 to +150 Unit V V V mA mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 08/07/2005 www.DataSheet4U.com ST 2SC2002 Characteristics at Tamb=25 oC Symbol DC Current Gain at VCE=1V, IC=50mA Current Gain Group M L K at VCE=2V, IC=300mA Base Emitter Voltage at IC=10mA, VCE=6V Emitter Cutoff Current at VEB=5V Collector Cutoff Current at VCB=60V Collector Saturation Voltage at IC=300mA, IB=30mA Base Saturation Voltage at IC=300mA, IB=30mA Gain Bandwidth Product at VCE=6V, IE=-10mA Collector to Base Capacitance at VCB=6V, f=1MHz COB 7.0 15 pF fT 50 140 MHz VBE(sat) 0.86 1.2 V VCE(sat) 0.15 0.6 V ICBO 100 nA IEBO 100 nA VBE 600 645 700 mV hFE hFE hFE hFE 90 135 200 30 80 180 270 400 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidi...