ST2SC2001

www.DataSheet4U.com ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS Value 30 25 5 700 600 150 -55 to +150 Unit V V V mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 www.DataSheet4U.com ST 2SC2001 Characteristics at Tamb=25 oC Symbol DC Current Gain at VCE=1V, IC=100mA Current Gain Group O Y G at VCE=1V, IC=700mA Collector Base Breakdown Voltage at IC=10μA Base Emitter Voltage at IC=10mA, VCE=6V Emitter Cutoff Current at VEB=5V Collector Cutoff Current at VCB=30V Collector Saturation Voltage at IC=700mA, IB=70mA Base Saturation Voltage at IC=700mA, IB=70mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz COB 13 25 pF fT 50 170 MHz VBE(sat) 0.95 1.2 V VCE(sat) 0.2 0.6 V ICBO 0.1 μA IEBO 0.1 μA VBE 0.6 0.7 V V(BR)CBO 30 V hFE hFE hFE hFE 90 135 200 50 180 270 400 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsi...