2SC4706
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=...
2SC4706
Silicon
NPN Triple Diffused Planar
Transistor (High Voltage Switchihg
Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4706 900 600 7 14(Pulse28) 7 130(Tc=25°C) 150 –55to+150 Unit V V V A A W °C °C
Application : Switching
Regulator and General Purpose
(Ta=25°C) 2SC4706 100max 100max 600min 10 to 25 0.5max 1.2max 6typ 160typ V MHz pF
20.0min 4.0max
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=–1.5A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
Unit
µA µA
19.9±0.3
V
4.0
a b
ø3.2±0.1
V
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL (Ω) 35.7 IC (A) 7 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 1.05 IB2 (A) –3.5 ton (µs) 1max tstg (µs) 5max tf (µs) 0.7max
5.45±0.1 B C E
5.45±0.1
Weight : Approx 6.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
14
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 2 I C /I B =5 Const.
I C – V BE Temperature Characteristics (Typical)
14 (V CE =4V)
6 1.
12
A
1.2 A
12 Collector Current I C (A)
800mA
Collector Current I C (A) 10
10
600mA
8
400m A
8
emp )
mp) e Te (Cas
1 V B E (sat)
Cas
eT
6
200mA
6
4
4
˚C (
25˚C
125
...