HFP50N06

www.DataSheet4U.com HFP50N06 July 2005 BVDSS = 60 V HFP50N06 60V N-Channel MOSFET FEATURES ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ (Typ.) ) RDS(on) = 22 mΩ ID = 50 A TO-220 1 2 3 1.Gate 2. Drain 3. Source ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.018 Ω (Typ.) @VGS=10V ‰ 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Source Voltage Drain-Source Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 60 50 35.4 200 ±25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 490 50 12 7.0 120 0.8 -55 to +175 300 Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Junction-to-Case Case-to-Sink J Junction-to-Ambient i A bi Parameter Typ. -0.5 -Max. 1.24 -62 5 62.5 ℃/W Units ◎ SEMIHOW REV.A0,July 2005 www.DataSheet4U.com HFP50N06 Electrical Characteristics TC=25 °C Symbol y Parameter unless otherwise specified Test Con...