FDZ197PZ

FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET www.DataSheet4U.com June 2009 FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20 V, -3.8 A, 64 mΩ Features „ Max rDS(on) = 64 mΩ at VGS = -4.5 V, ID = -2.0 A „ Max rDS(on) = 71 mΩ at VGS = -2.5 V, ID = -2.0 A „ Max rDS(on) = 79 mΩ at VGS = -1.8 V, ID = -1.0 A „ Max rDS(on) = 95 mΩ at VGS = -1.5 V, ID = -1.0 A „ Occupies only 1.5 mm2 of PCB area.Less than 50% of the area of 2 x 2 BGA „ Ultra-thin package: less than 0.65 mm height when mounted to PCB „ HBM ESD protection level > 4400V (Note3) „ RoHS Compliant General Description Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ197PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). Applications „ Battery management „ Load switch „ Battery protection PIN1 S S D D S G TOP WL-CSP 1x1.5 Thin BOTTOM MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25°C TA = 25°C (Note 1a) (Note 1b) TA = 25°C (Note 1a) Ratings -20 ±8 -3.8 -15 1.9 0.9 -55 to +150 Units V V A W °C Operating and Storage Junction Temperature Ra...