FDZ1905PZ

FDZ1905PZ Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET www.DataSheet4U.com July 2008 FDZ1905PZ Common Drain P-Channel 1.5V –20V, –3A, 123mΩ Features „ Max rS1S2(on) = 126mΩ at VGS = –4.5V, IS1S2 = –1A „ Max rS1S2(on) = 141mΩ at VGS = –2.5V, IS1S2 = –1A „ Max rS1S2(on) = 198mΩ at VGS = –1.8V, IS1S2 = –1A „ Max rS1S2(on) = 303mΩ at VGS = –1.5V, IS1S2 = –1A „ Occupies only 1.5 mm2 of PCB area, less than 50% of the area of 2 x 2 BGA „ Ultra-thin package: less than 0.65 mm height when mounted to PCB „ High power and current handling capability „ HBM ESD protection level > 4kV (Note 3) „ RoHS Compliant tm PowerTrench® WL-CSP General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced 1.5V PowerTrench® process with state of the art “low pitch” WL-CSP packaging process, the FDZ1905PZ minimizes both PCB space and rS1S2(on). This advanced WL-CSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rS1S2(on) . Applications „ Battery management „ Load switch „ Battery protection PIN1 S1 S1 G2 S2 S2 G1 G1 S1 G2 BOTTOM TOP S2 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VS1S2 VGS IS1S2...