BDW94CF

www.DataSheet4U.com BDW94CF PNP Epitaxial Silicon Transistor July 2005 BDW94CF PNP Epitaxial Silicon Transistor Power Linear and Switching Application Power Darlington TR Complement to BDW93CF Respectively 1 TO-220F 2.Collector 3.Emitter 1.Base Absolute Maximum Ratings Symbol VCBO VCEO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Current (Pulse) * Base Current Ta = 25°C unless otherwise noted Parameter Value -100 -100 -12 -15 -0.2 30 150 -65 ~ 150 Units V V A A A W °C °C Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature TC = 25°C unless otherwise noted Electrical Characteristics Symbol VCEO(sus) ICBO ICEO IEBO hFE Parameter Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain * Conditions IC -100mA, IB = 0 VCB = -100V, IE = 0 VVCE = -100V, IB = 0 VEB = -5V, IC = 0 VCE = -3V, IC = -3A VCE = -3V, IC = -5A VCE = -3V, IC = -10A IC = -5A, IB = -20mA IC = -10A, IB = -100mA IC = -5A, IB = -20mA IC = -10A, IB = -100mA IF = -5A IF = -10A Min. -100 Typ. Max -100 -1 -2 Units V µA mA mA 1000 750 100 20000 -2 -3 -2.5 -4 -1.3 -1.8 -2 -4 V V V V V V VCE(sat) VBE(sat) VF Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Parallel Diode Forward Voltage * * Pulse Test: PW = 300µs, Duty Cycle = 1.5% Pulsed ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BDW94CF Rev. A...