CD8550

www.DataSheet4U.com Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR TRANSISTOR CD8550 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PC Tj, Tstg VALUE 25 40 6.0 2.0 1.0 -55 to +125 UNIT V V V A W deg C ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN VCEO IC=10mA, IB=0 25 Collector -Emitter Voltage VCBO IC=100uA, IE=0 40 Collector -Base Voltage VEBO IE=10uA, IC=0 6.0 Emitter Base Voltage ICBO VCB=20V, IE=0 Collector Cut off Current IEBO VEB=4V, IC=0 Emitter Cut off Current hFE IC=5mA,VCE=1V 45 DC Current Gain IC=100mA,VCE=1V* 85 IC=800mA,VCE=1V 40 Collector Emitter Saturation Voltage VCE(Sat) IC=800mA,IB=80mA VBE(Sat) IC=800mA,IB=80mA Base Emitter Saturation Voltage Dynamic Characteristics Output Capacitance Transition Frequency TYP - MAX 500 100 300 0.50 1.2 UNIT V V V nA nA V V Cob ft VCB=10V,f=1MHz VCE=10V,IC=100mA, f=100MHz C 120-200 100 - 35 - pF MHz CLASSIFICATION hFE* B 85-160 D 160-300 Continental Device India Limited Data Sheet Page 1 of 3 TO-92 Plastic Package www.DataSheet4U.com B TO-92 Transistors on Tape and Ammo Pack Amm o Pack Style M EC H AN IC AL D ATA Ad hesive Tape on To p Sid e P h A A1 (p) FE E D C arrier Strip A h T 3 2 1 H1 H0 ...