MSAHZ52F120A

www.DataSheet4U.com 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGZ52F120A MSAHZ52F120A 1200 Volts 52 Amps 3.2 Volts vce(sat) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (MSAHZ52F120A only) Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC MAX. 1200 1200 +/-20 +/-30 52 33 104 66 65 260 66 300 -55 to +150 -55 to +150 50 100 0.4 COLLECTOR UNIT Volts Volts Volts Volts Amps Amps mJ A A Watts °C °C Amps Amps °C/W Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25°C Tj= 90°C Peak Collector Current (pulse width limited by Tjmax,) 90°C Tj= 25°C Tj= Avalanche energy (single pulse) @ IC= 25A, VCC= 50V, L= 200µH, Short circuit current (SOA) , Short circuit (reverse) current (RBSOA) , VCE≤ 1200V, TJ= 150°C Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode,...