www.DataSheet4U.com
2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MSAGX60F60A MSAHX6...
www.DataSheet4U.com
2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MSAGX60F60A MSAHX60F60A
600 Volts 60 Amps 2.9 Volts vce(sat)
N-CHANNEL INSULATED GATE BIPOLAR
TRANSISTOR
Features
Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)60F60B high frequency IGBT, low switching losses anti-parallel FREDiode (MSAHX60F60A only)
Maximum Ratings @ 25° C (unless otherwise specified)
DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ ≥ 25°C
SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg IS ISM θJC
MAX. 600 600 +/-20 +/-30 60 32 120 64 300 -55 to +150 -55 to +150 32 100 0.4
UNIT Volts Volts Volts Volts Amps Amps Amps Watts °C °C Amps Amps °C/W
Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25°C
Tj= 90°C
Peak Collector Current, pulse width limited by Tjmax, Safe Operating Area (RBSOA) @ VGE= 15V, L= 100µH (clamped inductive
load), RG= 4.7Ω, Tj= 125°C, VCE= 0.8 x VCES
Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode, MSAHX60F60A only) Pulse Source Current (Body Diode, MSAHX60F60A only) Thermal Resistance, Junction to Case
Mechanical Outli...