RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Description
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DB-55008L-318
RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
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Excellent thermal stability Frequency: 225 - 318 MHz Supply voltage: 13.6 V Output power: 8 W Power gain: 13.5 ± 0.7 dB Efficiency: 51 % - 79 % BeO free amplifier
Description
The DB-55008L-318 is a c...