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MRFE6S9200HSR3

Part Number	MRFE6S9200HSR3
Manufacturer	Motorola Semiconductor Products
Description	RF Power FET
Published	Jul 29, 2009
Detailed Description	Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs ...
Datasheet	MRFE6S9200HSR3 PDF File

Overview

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg.
, f = 880 MHz, 3GPP Test Model 1, 64 DPCH with 45.
2% Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 21 dB Drain Efficiency — 35% Device Output Signal PAR — 6...

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MRFE6S9200HSR3 RF Power FET - Motorola Semiconductor Products

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