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ST 9016
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS Value 30 20 4 25 400 150 -65 to +150 Unit V V V mA mW
O O
C C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
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ST 9016
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=5V, IC=1mA Current Gain Group D E F G H I Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=100μA Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=3V Collector Emitter Saturation Voltage at IC=10mA, IB=1mA Base Emitter on Voltage at VCE=5V, IC=1mA Collector Base Capacitance at VCB=10V, f=1MHz Gain Bandwidth Product at VCE=5V, IC=1mA fT 400 620 MHz CCBO 1.2 1.6 pF VBE(on) 0.72 V VCE(sat) 0.1 0.3 V IEBO 100 nA ICBO 100 nA V(BR)EBO 4 V V(BR)CEO 20 V V(BR)CBO 30 V hFE hFE hFE hFE hFE hFE 28 39 54 72 97 132 45 60 80 108 146 198 Min. Typ. Max. Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
.