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ST 9015
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications. The t...
www.DataSheet4U.com
ST 9015
PNP Silicon Epitaxial Planar
Transistor
for switching and AF amplifier applications. The
transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the
NPN transistor ST 9014 is recommended.
1. Emitter 2. Base 3. Collector TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS
Value 50 45 5 100 450 150 - 55 to + 150
Unit V V V mA mW
O
C C
O
Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 1 mA Current Gain Group
Symbol A B C D hFE hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(sat) fT COB
Min. 60 100 200 400 50 45 5 100 -
Max. 150 300 600 800 50 50 0.65 1 7
Unit -
Collector Base Cutoff Current at -VCB = 50 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 5 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 5 mA Gain Bandwidth Product at -VCE = 10 V, -IC = 10 mA Output Capacitance at -VCB = 10 V, f = 1 MHz
nA nA V V V V V MHz pF
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