ST9014

ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 50 45 5 100 450 150 -55 to +150 Unit V V V mA mW OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 9014 Characteristics at Tamb=25 OC DC Current Gain at VCE=5V, IC=1mA Current Gain Group A B C D Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=100μA Collector Cutoff Current at VCB=50V Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=100mA,IB=5mA Base Saturation Voltage at IC=100mA,IB=5mA Gain Bandwidth Product at VCE=5V,IC=10mA Output Capacitance at VCB=10V,f=1MHz Noise Figure at VCE=5V,IC=200μA at f=1KHz,RG=2KΩ Symbol hFE hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) fT COB NF Min. 60 100 200 400 50 45 5 - - Typ....