ST9012

www.DataSheet4U.com ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor 9013 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj Tstg Value 40 30 5 500 625 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 50 mA Current Gain Group G H I at -VCE = 1 V, -IC = 500 mA Collector Base Cutoff Current at -VCB = 35 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 100 μA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 100 μA Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base Emitter Voltage at -VCE = 1 V, -IC = 100 mA Gain Bandwidth Product at -VCE = 6 V, -IC = 20 mA Symbol hFE hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(sat) -VBE fT Min. 110 177 250 40 40 30 5 100 Max. 183 250 380 100 100 0.6 1.2 1 - Unit nA nA V V V V V V MHz SEM...