STD95N4LF3

www.DataSheet4U.com STD95N4LF3 N-channel 40 V, 5.0 mΩ, 80 A DPAK STripFET™ Power MOSFET Features Type STD95N4LF3 VDSS 40 V RDS(on) max < 6.0 mΩ ID PD 80 A(1) 110 W 1. Value limited by wire bonding ■ ■ 3 1 DPAK 100% avalanche tested Logic level drive Applications ■ Switching application – Automotive Figure 1. Internal schematic diagram D (TAB or 2) Description This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics’ unique "single feature size" strip-based process with fewer critical alignment steps and therefore exceptional manufacturing reproducibility. The resulting transistor has extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. G(1) S(3) AM01474v1 Table 1. Device summary Order code Marking 95N4L Package DPAK Packaging Tape and reel STD95N4LF3 February 2009 Rev 1 1/14 www.st.com 14 www.DataSheet4U.com Contents STD95N4LF3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . ...