N-Channel Power MOSFET
STF12N65M5, STP12N65M5
Datasheet
N-channel 650 V, 390 mΩ typ., 8.5 A MDmesh M5 Power MOSFET in a TO-220FP and TO-220 pac...
Description
STF12N65M5, STP12N65M5
Datasheet
N-channel 650 V, 390 mΩ typ., 8.5 A MDmesh M5 Power MOSFET in a TO-220FP and TO-220 packages
TAB
123 TO-220FP
123 TO-220
D(2, TAB)
Features
Order code
VDS @ TJ max.
RDS(on) max.
STF12N65M5 STP12N65M5
710 V
430 mΩ
Extremely low RDS(on) Low gate charge and input capacitance Excellent switching performance 100% avalanche tested
ID 8.5 A
G(1) S(3)
Applications
Switching applications
AM01475v1_noZen
Description
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Product status links STF12N65M5 STP12N65M5
Product summary
Order code
STF12N65M5
Marking
12N65M5
Package
TO-220FP
Packing
Tube
Order code
STP12N65M5
Marking
12N65M5
Package
TO-220
Packing
Tube
DS6117 - Rev 6 - March 2022 For further information contact your local STMicroelectronics sales office.
www.st.com
STF12N65M5, STP12N65M5
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(2)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
IAR
Avalanche current, repetitive or not repetiti...
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