ST2SA1016

www.DataSheet4U.com ST 2SA1016 PNP Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC -ICP Ptot Tj TS Value 120 100 5 50 100 400 125 -55 to +125 Unit V V V mA mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/5/2004 www.DataSheet4U.com ST 2SA1016 Characteristics at Tamb=25 OC Symbol DC Current Gain at -VCE=6V, -IC=1mA Current Gain Group F G H Collector Base Breakdown Voltage at -IC=10μA Collector Emitter Breakdown Voltage at -IC=1mA Emitter Base Breakdown Voltage at -IE=10μA Collector Cutoff Current at -VCB=80V Emitter Cutoff Current at -VEB=4V Collector Emitter Saturation Voltage at -IC=10mA, -IB=1mA Gain Bandwidth Product at -VCE=6V, -IC=1mA Output Capacitance at -VCB=10V, f=1MHz Noise Level at VCC=30V, IC=1mA at Rg=56KΩ,VG=77dB/1kHz Noise Peak Level at VCC=30V, IC=1mA at Rg=56KΩ,VG=77dB/1kHz CNO(peak) 200 mV CNO(ave) 35 mV COB 2.2 pF fT 110 MHz -VCE(sat) 0.5 V -IEBO 1 μA -ICBO 1 μA -V(BR)EBO 5 V -V(BR)CEO 100 V -V(BR)CBO 120 V hFE hFE hFE...