Document
www.DataSheet4U.com
Freescale Semiconductor Technical Data
Document Number: MRF5S21045 Rev. 1, 7/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 10 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 25.5% IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 39 dBc @ 3.84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 45 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • N Suffix Indicates Lead - Free Terminations • 200°C Capable Plastic Package • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1
2170 MHz, 10 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF5S21045NR1(MR1)
CASE 1484 - 02, STYLE 1 TO - 272 WB - 4 PLASTIC MRF5S21045NBR1(MBR1)
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value - 0.5, +68 - 0.5, +15 130 0.74 - 65 to +150 200 45 Unit Vdc Vdc W W/°C °C °C W
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 45 W CW Case Temperature 79°C, 10 W CW Symbol RθJC Value (1,2) 1.35 1.48 Unit °C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
www.DataSheet4U.com Test Methodology Class 1C (Minimum) A (Minimum) IV (Minimum) Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak .