MRF5S21045MBR1

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S21045 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 10 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 25.5% IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 39 dBc @ 3.84 MHz Channel Bandwidth Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 45 Watts CW Output Power Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection N Suffix Indicates Lead - Free Terminations 200°C Capable Plastic Package In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 2170 MHz, 10 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF5S21045NR1(MR1) CASE 1484 - 02, STYLE 1 TO - 272 WB - 4 PLASTIC MRF5S21045NBR1(MBR1) Table 1. ...