MRF7S16150HSR3

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 1700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. Typical WiMAX Performance: VDD = 28 Volts, IDQ = 1500 mA, Pout = 32 Watts Avg., f = 1600 and 1660 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 19.7 dB Drain Efficiency — 25.4% Device Output Signal PAR — 8.2 dB @ 0.01% Probability on CCDF ACPR @ 5.25 MHz Offset — - 47.5 dBc in 0.5 MHz Channel Bandwidth Capable of Handling 10:1 VSWR, @ 32 Vdc, 1630 MHz, 150 Watts CW Output Power Pout @ 1 dB Compression Point w 150 Watts CW Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate - Source Voltage Range for Improved Class C Operation RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S16150HR3 MRF7S16150HSR3 1600- 1660 MHz, 32 W AVG., 28 V WiMAX LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF7S16150HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S16150HSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Operating Voltage Storage Temp...