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MRF7S19210HSR3

Part Number	MRF7S19210HSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Jul 16, 2009
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19210H Rev. 0, 12/2008 RF Power Fiel...
Datasheet	MRF7S19210HSR3 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF7S19210H Rev.
0, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulations.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg.
, Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 20 dB Drain Efficiency — 29% Device Output Signal PAR — 5.
9 dB @ 0.
01% Pr...

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MRF7S19210HSR3 RF Power Field Effect Transistors - Freescale Semiconductor

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