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MRF7S19120NR1 Dataheets PDF



Part Number MRF7S19120NR1
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF Power Field Effect Transistor
Datasheet MRF7S19120NR1 DatasheetMRF7S19120NR1 Datasheet (PDF)

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 0, 9/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout .

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 0, 9/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 36 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 18 dB Drain Efficiency — 32% Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 38.5 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 120 Watts CW Peak Tuned Output Power • Pout @ 1 dB Compression Point w 120 W CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF7S19120NR1 1930 - 1990 MHz, 36 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 1730 - 02 TO - 270 WBL - 4 PLASTIC Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 120 W CW Case Temperature 80°C, 36 W CW Symbol RθJC Value (2,3) 0.43 0.51 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Design Tools (Software & Tools)/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. This document contains information on a preproduction product. Specifications and information herein are subject to change without notice. © Freescale Semiconductor, Inc., 2007. All rights reserved. MRF7S19120NR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics www.DataSheet4U.com Test Methodology Class 2 (Minimum) A (Minimum) IV (Minimum) Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 270 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.7 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss — — — 1.65 600 1.03 — — — pF pF pF VGS(th) VGS(Q) VDS(on) 1.2 2 0.15 2 2.7 0.275 2.7 3.5 0.35 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 36 W Avg., f = 1930 MHz and f = 1990 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. (continued) Gps ηD PAR ACPR IRL 16.5 30 5.7 — — 18 32 6.1 - 38.5 - 10 19.5 36 — - 35.5 -7 dB % dB dBc dB MRF7S19120NR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) www.DataSheet4U.com Characteristic Symbol VBW — 20 — Min Typ Max Unit MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, 1930 - 1990 MHz Bandwidth Video Bandwidth @ 120 W PEP Pout .


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