MRF7S18125BHR3

Freescale Semiconductor Technical Data www.DataSheet4U.com Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. GSM Application Typical GSM Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 125 Watts CW, f = 1930 MHz. Power Gain — 16.5 dB Drain Efficiency — 55% GSM EDGE Application Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 57 Watts Avg., Full Frequency Band (1930 - 1990 MHz). Power Gain — 17 dB Drain Efficiency — 39% Spectral Regrowth @ 400 kHz Offset = - 60 dBc Spectral Regrowth @ 600 kHz Offset = - 74 dBc EVM — 2.6% rms Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 125 Watts CW Output Power Typical Pout @ 1 dB Compression Point ] 140 Watts CW Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Integrated ESD Protection RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S18125BHR3 MRF7S18125BHSR3 1930- 1990 MHz, 125 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF7S18125BHR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S18125BHSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Operating Voltage Storage ...