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SST12LP14C

Silicon Storage Technology

High-Gain Power Amplifier

2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14C SST-GP1214A2.4 GHz High Gain High Power PA Preliminary Specifi...


Silicon Storage Technology

SST12LP14C

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Description
2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14C SST-GP1214A2.4 GHz High Gain High Power PA Preliminary Specifications FEATURES: High Gain: – Typically 32 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power: – >26 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 4 – Meets 802.11g OFDM ACPR requirement up to 23 dBm – ~4% added EVM up to 20 dBm for 54 Mbps 802.11g signal – Meets 802.11b ACPR requirement up to 22.5 dBm High power-added efficiency/Low operating current for both 802.11b/g applications – ~29%/205 mA @ POUT = 23 dBm for 802.11g – ~27%/195 mA @ POUT = 22.5 dBm for 802.11b Single-pin low IREF power-up/-down control – IREF <2 mA Low idle current – ~100 mA ICQ High-speed power-up/-down – Turn on/off time (10%- 90%) <100 ns – Typical power-up/-down delay with driver delay included <200 ns High temperature stability – ~1 dB power variation between 0°C to +85°C Low shut-down current (< 0.1 µA) Excellent On-chip power detection – <+/- 0.5dB variation between 0°C to +85°C – <+/- 0.3dB variation Ch1 through Ch14 20 dB dynamic range on-chip power detection Simple input/output matching Packages available – 16-contact VQFN – 3mm x 3mm All non-Pb (lead-free) devices are RoHS compliant APPLICATIONS: WLAN (IEEE 802.11b/g) Home RF Cordless phones 2.4 GHz ISM wireless equipment PRODUCT DESCRIPTION The SST12LP14C is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT ...




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